Generation of α-SiC stacking sequences

Shockley-Frank stacking faults in 6H-SiC

Stacking of adjacent graphene layers grown on C-face SiC

Electronic driving force for stacking fault expansion in 4H-SiC

Trapping of electrons in stacking fault SF interface states may lower the energy of a SF more than it costs to form the SF. This “electronic stress” driving force for SF expansion is evaluated for single and double stacking faults in 4H-SiC in terms of a two-dimensional free-electron density of states model based on first-principles calculations. In contrast with previous work, which claimed th...

Optical investigations techniques used for stacking faults characterization in SiC

Stacking Faults (SFs) are important crystal defects in 4H-SiC [1]. They can be electrically active and, in this case, behave as deep quantum well (QW) traps for electrons [2]. This leads to the degradation of high voltage bipolar diodes [3]. The basic origin of SFs in SiC is the small total energy difference between two different polytypes. The net consequence is that they can appear spontaneou...

Systematic generation of all nonequivalent closest-packed stacking sequences of length N using group theory.

An algorithm has been developed that generates all of the nonequivalent closest-packed stacking sequences of length N. There are 2(N) + 2(-1)(N) different labels for closest-packed stacking sequences of length N using the standard A, B, C notation. These labels are generated using an ordered binary tree. As different labels can describe identical structures, we have derived a generalized symmet...